Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-24
2010-11-02
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S530000, C257S510000, C257S408000, C257S392000, C257S365000, C257S903000
Reexamination Certificate
active
07825471
ABSTRACT:
A semiconductor memory device includes a first well region of a first conductivity type, first and second SRAM cells adjacently arranged to each other, the first and second SRAM cells each including at least a first transfer transistor and a drive transistor formed on the first well, the first transfer transistor and the drive transistor being coupled in series between a bit line and a power source line, and a first diffusion region of the first conductivity type arranged between the drive transistor of the first SRAM cell and the drive transistor of the second SRAM cell, to apply a first well potential to the first well.
REFERENCES:
patent: 6856031 (2005-02-01), Nguyen et al.
patent: 6885609 (2005-04-01), Lee et al.
patent: 7239538 (2007-07-01), Asayama et al.
patent: 2004/0120209 (2004-06-01), Lee et al.
patent: 2006/0171192 (2006-08-01), Asayama et al.
patent: 2007/0090485 (2007-04-01), Takao
patent: 2004-200702 (2004-07-01), None
patent: 2005-236282 (2005-09-01), None
patent: 2006-210736 (2006-08-01), None
McGinn IP Law Group PLLC
NEC Electronics Corporation
Pham Long
LandOfFree
Semiconductor memory device including SRAM cell having well... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device including SRAM cell having well..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device including SRAM cell having well... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4247949