Semiconductor memory device including memory cells each having a

Details Semiconductor memory device including memory cells each having a Semiconductor memory device including memory cells each having a

1994-12-23

1997-11-04

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257296, 257307, 257308, 257310, 257311, H01L 27108, H01L 2994, H01L 31062, H01L 31113

Patent

active

056843151

ABSTRACT:
A semiconductor memory device has memory cells provided at intersections between word line conductors and data line conductors. Each of the memory cells includes a cell selecting transistor and an information storage capacitor. The capacitor in each of the memory cells includes a first capacitor component formed over the control electrode of the transistor and a second capacitor component formed over a word line conductor which is adjacent to a word line conductor integral with the control electrode of the transistor. Each of the first and second capacitor components has a common electrode, a storage electrode and a dielectric film sandwiched therebetween, and the storage electrode is at a level higher than the common electrode in each of said first and second capacitor components. The storage electrodes of the first and second capacitor components are electrically connected with each other and with one of the semiconductor regions of the transistor. The other semiconductor region of the transistor is electrically connected with one of the data line conductors. Patterning of the storage electrodes of the first and second capacitor components is preferalbly effected by use of masks of a stripe pattern.

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patent: 5396456 (1995-03-01), Liu et al.
patent: 5475248 (1995-12-01), Takenaka
patent: 5481127 (1996-01-01), Ogawa

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