Semiconductor memory device including memory cell portion...

Details Semiconductor memory device including memory cell portion... Semiconductor memory device including memory cell portion...

2005-12-27

2005-12-27

Ho, Hoai (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S072000, C365S173000, C365S189080, C257S311000

Reexamination Certificate

active

06980463

ABSTRACT:
A semiconductor memory device includes a first magneto resistive element disposed in a memory cell portion, a first circuit disposed in the memory cell portion, the first circuit writing data into the first magneto resistive element or reading out data from the first magneto resistive element, and at least a portion of a second circuit disposed in a region below the memory cell portion.

REFERENCES:
patent: 5343422 (1994-08-01), Kung et al.
patent: 5894447 (1999-04-01), Takashima
patent: 5923607 (1999-07-01), Suh
patent: 6034887 (2000-03-01), Gupta et al.
patent: 6174737 (2001-01-01), Durlam et al.
patent: 6178131 (2001-01-01), Ishikawa et al.
patent: 6185143 (2001-02-01), Perner et al.
patent: 6188615 (2001-02-01), Perner et al.
patent: 6191972 (2001-02-01), Miura et al.
patent: 6256224 (2001-07-01), Perner et al.
patent: 6256247 (2001-07-01), Perner
patent: 6262625 (2001-07-01), Perner et al.
patent: 6269040 (2001-07-01), Reohr et al.
patent: 6317376 (2001-11-01), Tran et al.
patent: 6335890 (2002-01-01), Reohr et al.
patent: 6356477 (2002-03-01), Tran
patent: 6549446 (2003-04-01), Morley et al.
patent: 6567287 (2003-05-01), Scheuerlein
patent: 6584589 (2003-06-01), Perner et al.
patent: 6593608 (2003-07-01), Sharma et al.
patent: 6724653 (2004-04-01), Iwata et al.
patent: 6795334 (2004-09-01), Iwata et al.
patent: 6804144 (2004-10-01), Iwata
patent: 2001/0035545 (2001-11-01), Schuster-Woldan et al.
patent: 2002/0006058 (2002-01-01), Nakajima et al.
patent: 2002/0027803 (2002-03-01), Matsui
patent: 2002/0037595 (2002-03-01), Hosotani
patent: 2002/0057593 (2002-05-01), Hidaka
patent: 2002/0080644 (2002-06-01), Ito
patent: 2002/0136047 (2002-09-01), Scheuerlein
patent: 2002/0149962 (2002-10-01), Horiguchi
patent: 2003/0090934 (2003-05-01), Iwata
patent: 2003/0123271 (2003-07-01), Iwata
patent: 2003/0123281 (2003-07-01), Iwata et al.
patent: 2003/0161197 (2003-08-01), Iwata et al.
patent: 2003/0198080 (2003-10-01), Iwata
patent: 2001-217398 (2001-08-01), None
patent: 2001-357666 (2001-12-01), None
patent: WO 00/38191 (2000-06-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, IEEE International Solid-State Circuits Conference/Session 7/Technical Digest: Emerging Memory & Device Technologies/Paper TA 7.2, 2000, pp. 128 & 129.

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