Semiconductor memory device including magneto resistive...

Details Semiconductor memory device including magneto resistive... Semiconductor memory device including magneto resistive...

2005-11-22

2005-11-22

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S063000

Reexamination Certificate

active

06967864

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, and a first magneto resistive element separated from the semiconductor substrate, and including a first magnetic layer and a first nonmagnetic layer. The first magnetic layer and the first nonmagnetic layer are formed in a direction perpendicular to the semiconductor substrate.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5835314 (1998-11-01), Moodera et al.
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 6509621 (2003-01-01), Nakao
patent: 6515341 (2003-02-01), Engel et al.

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