Semiconductor memory device including fuse element

Details Semiconductor memory device including fuse element Semiconductor memory device including fuse element

2005-10-18

2005-10-18

Nelms, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Minor loop

C365S200000, C365S201000, C365S230060, C365S230080, C257S209000

Reexamination Certificate

active

06956783

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, input-output terminals, and a fuse block. A plurality of memory macros each having a plurality of memory cells is arranged on the semiconductor substrate. The insulating layer, which has a window portion, may be formed on the semiconductor substrate and covering the memory macros, the insulating layer having a window portion. The input-output terminals are arranged inline along an edge portion of the surface of the insulating layer. The input-output terminals transmit and receive signals between the memory macros and a circuit external to the semiconductor device. The fuse block is arranged in a space corresponding to the window portion in the insulating layer. The fuse block may include a plurality of fuse elements used to remedy defective portions of the plurality of memory cells in the plurality of memory macros.

REFERENCES:
patent: 6259636 (2001-07-01), Fukuda et al.
patent: 11-134870 (1999-05-01), None
patent: 2000-14384 (2000-04-01), None

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