Semiconductor memory device including floating body memory...

Details Semiconductor memory device including floating body memory... Semiconductor memory device including floating body memory...

2007-11-21

2009-11-17

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S189070, C365S203000, C365S207000

Reexamination Certificate

active

07619928

ABSTRACT:
A semiconductor memory device includes first and second memory cells having floating bodies, each of which includes a gate connected to a word line and an electrode connected to a common source line to store data. A controller applies a first voltage to the common source line, a negative second voltage to the word line, a third voltage as a first sense enable control voltage and the first voltage as a second sense enable control voltage during a first write period of a write operation. The controller also applies a fourth voltage to the common source line and the first voltage to the word line during a second write period of the write operation. The sensing portion amplifies a bit line and an inverted bit line to the third voltage or the first voltage, respectively, during the first write period in response to the first and second sense enable control voltages.

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