Semiconductor memory device including FET memory elements

Details Semiconductor memory device including FET memory elements Semiconductor memory device including FET memory elements

2011-08-23

2011-08-23

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C257S295000, C257SE27104

Reexamination Certificate

active

08004871

ABSTRACT:
A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.

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