Semiconductor memory device including an SOI substrate

Details Semiconductor memory device including an SOI substrate Semiconductor memory device including an SOI substrate

2006-11-21

2006-11-21

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S288000, C257S296000, C365S051000, C365S174000, C365S189090, C365S156000

Reexamination Certificate

active

07138684

ABSTRACT:
A semiconductor memory device includes a plurality of N and P channel MOS transistors. The plurality of MOS transistors are formed on an SOI (Silicon On Insulator) substrate. Each MOS transistor includes a source region, a drain region, and a body region located between the source region and the drain region. The body region of at least one N channel MOS transistor is electrically fixed. The body region of at least one P channel MOS transistor is rendered floating.

REFERENCES:
patent: 3836894 (1974-09-01), Cricchi
patent: 3990056 (1976-11-01), Luisi et al.
patent: 4233672 (1980-11-01), Suzuki et al.
patent: 4253162 (1981-02-01), Hollingsworth
patent: 4797721 (1989-01-01), Hsu
patent: 4899202 (1990-02-01), Blake et al.
patent: 4946799 (1990-08-01), Blake et al.
patent: 4965213 (1990-10-01), Blake
patent: 5032529 (1991-07-01), Beitman et al.
patent: 5047979 (1991-09-01), Leung
patent: 5060035 (1991-10-01), Nishimura et al.
patent: 5079605 (1992-01-01), Blake
patent: 5125007 (1992-06-01), Yamaguchi et al.
patent: 5253202 (1993-10-01), Bronner et al.
patent: 5283457 (1994-02-01), Matloubian
patent: 5343087 (1994-08-01), Furuyama
patent: 5428239 (1995-06-01), Okumura et al.
patent: 5506436 (1996-04-01), Hayashi et al.
patent: 6870226 (2005-03-01), Maeda et al.
patent: 2004/0041209 (2004-03-01), Yano et al.
patent: 59-220961 (1984-12-01), None
patent: 01-268063 (1989-10-01), None
patent: 02-144969 (1990-06-01), None
patent: 04-291956 (1992-10-01), None
patent: 04-317376 (1992-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device including an SOI substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device including an SOI substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device including an SOI substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3627721