Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2008-03-13
2010-11-02
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S200000, C365S201000, C365S189070
Reexamination Certificate
active
07826295
ABSTRACT:
In a semiconductor memory device, a repair circuit includes mode fuses to select one of plural repair modes corresponding to plural kinds of defects, respectively. The semiconductor memory device can repair a defective memory cell having operational margin defect without using redundancy memory cells.
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Masumizu Atsushi
Okuma Sadayuki
Elpida Memory Inc.
McGinn IP Law Group PLLC
Nguyen Tuan T.
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