Semiconductor memory device including a particular memory cell b

Details Semiconductor memory device including a particular memory cell b Semiconductor memory device including a particular memory cell b

1997-09-25

1999-04-13

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365210, 36523003, G11C 1100

Patent

active

058944478

ABSTRACT:
A semiconductor memory device comprises a plurality of word lines, a plurality of bitlines, a plurality of memory cells selectively disposed at intersections between the plural bitlines and the plural word lines and arranged to store data in accordance with change in the resistance, a plurality of sub-cell blocks formed by one of the plural memory cells or two or more memory cells in series connected in a direction of the bitline, a plurality of cell blocks formed by at least two sub-cell blocks in series connected in the direction of the bitline and a memory cell array formed by at least two cell blocks disposed in a direction of the word line, circuit for allowing an electric current to flow in a direction of the bitline of the plural cell blocks, and circuit for reading data from nodes at two ends of the sub-cell block in the plural sub-cell blocks including a memory cell selected by the plural word lines.

REFERENCES:
patent: 4829476 (1989-05-01), Dupuis et al.
patent: 5029135 (1991-07-01), Okubo

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