Active solid-state devices (e.g. – transistors – solid-state diode – Fet configuration adapted for use as static memory cell
Reexamination Certificate
2006-06-20
2006-06-20
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Fet configuration adapted for use as static memory cell
C257S202000, C257S203000, C257S204000, C257S206000, C257S401000
Reexamination Certificate
active
07064453
ABSTRACT:
A configuration is provided to reduce variations in the width of the gate of a read-out transistor without increasing the surface area of a memory cell. To do this, a recess is provided in an inner corner of a gate electrode that is bent into an L-shape. The recess is located so as to face a rectangular portion of an active region of the memory cell.
REFERENCES:
patent: 3824564 (1974-07-01), Wegener
patent: 4055836 (1977-10-01), Weimer
patent: 4151607 (1979-04-01), Koyanagi et al.
patent: 4710897 (1987-12-01), Masuoka et al.
patent: 4907057 (1990-03-01), Ariizumi et al.
patent: 5208782 (1993-05-01), Sakuta et al.
patent: 6037638 (2000-03-01), Abe et al.
patent: 6064608 (2000-05-01), Ikeda
patent: 6445017 (2002-09-01), Song
patent: 6538338 (2003-03-01), Kumagai et al.
patent: 6933578 (2005-08-01), Sato
patent: 2002/0037609 (2002-03-01), Zhang et al.
patent: 2003/0111679 (2003-06-01), Kuge
patent: 2003/0119265 (2003-06-01), Kawazawa
patent: 2005/0018471 (2005-01-01), Arimoto et al.
patent: 2005/0253143 (2005-11-01), Takaura et al.
patent: 05-265421 (1993-10-01), None
patent: 10-247691 (1998-09-01), None
patent: 2003-085975 (2003-03-01), None
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Soward Ida M.
LandOfFree
Semiconductor memory device including a gate electrode with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device including a gate electrode with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device including a gate electrode with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3686138