Semiconductor memory device including a floating gate having an

Details Semiconductor memory device including a floating gate having an Semiconductor memory device including a floating gate having an

1994-09-06

1995-08-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257317, 257336, 257407, 257391, H01L 2936, H01L 2978

Patent

active

054462983

ABSTRACT:
The present invention provides a semiconductor device including nonvolatile memories and a manufacturing method thereof which have advantages in reliability of writing operation and in erasing time of erasing operation. This semiconductor device comprises a silicon substrate 40, a N type drain 40 formed in the surface of the substrate 36, a N type source 36, a tunnel oxide layer 14 located on the surface of the substrate, and a floating gate located on the tunnel oxide layer 14, having a first portion 55 in side of the source 36 and a second portion 54 in both sides of the drain 40 and the substrate 2, the second portion 54 being of a lower N type dosage than the first portion 55.

REFERENCES:
patent: 4742491 (1988-05-01), Liang et al.
patent: 4994873 (1991-02-01), Madan
patent: 5241202 (1993-08-01), Lee

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