Semiconductor memory device having two transistors and at least

Details Semiconductor memory device having two transistors and at least Semiconductor memory device having two transistors and at least

1992-05-27

1994-10-18

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365150, 365182, 257295, 257300, 257307, G11C 1122

Patent

active

053574605

ABSTRACT:
A semiconductor memory device which comprises unit memory cells each including two transistors each having a source/drain region and a gate electrode and one capacitor having a capacitor dielectric film, an upper electrode and a lower electrode, the gate electrode of each transistor being connected to a common word line, one source/drain region of each transistor being connected to a bit line and a reversed bit line respectively and the other source/drain region being connected to the upper electrode and the lower electrode respectively, and the bit line, the reversed bit line and the word line being disposed under the lower electrode of the capacitor.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 5046043 (1991-07-01), Miller et al.
patent: 5140389 (1992-08-01), Kimura et al.

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