Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2005-02-22
2005-02-22
Nelms, David (Department: 2818)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S189011, C365S196000
Reexamination Certificate
active
06859384
ABSTRACT:
An active region which forms two transistors included in a memory cell is arranged to have a strip shape along a predetermined axis crossing first and second bit lines at less than 90 degrees, whereby it is possible to reduce a junction area corresponding to a connection node of connecting the two transistors between the active region and a substrate and to reduce a leak current.
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McDermott Will & Emery LLP
Nelms David
Tran Long
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