Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-09-06
1998-04-28
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257298, 257303, 257306, 257307, 438396, 438397, H01L 27108, H01L 2976
Patent
active
057448337
ABSTRACT:
A semiconductor memory device with a tree-type capacitor having increased area for reliable storage thereon of electrical charges representative of data. The tree-type capacitor includes a storage electrode consisting of a trunk-like conductive layer and at least a branch-like conductive layer. The trunk-like conductive layer is electrically coupled to one of the source/drain regions of the transfer transistor in the semiconductor memory device and extends substantially upright. The branch-like conductive layer has one end connected to the trunk-like conductive layer and can be structured in various shapes that allow the branch-like conductive layer to have an increased surface area. A dielectric layer is formed over exposed surfaces of the trunk-like conductive layer and the branch-like conductive layer and an overlaying conductive layer is formed over the dielectric layer which serves as an opposing electrode for the tree-type capacitor.
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Martin Wallace Valencia
United Microelectronics Corporation
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