Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Patent
1990-04-30
1990-12-25
Gossage, Glenn
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
365190, 365233, 365193, G11C 11407
Patent
active
049808630
ABSTRACT:
A semiconductor memory device comprises a memory section of a dynamic type, a pair of first bit lines connected to the memory section, which are set to different potentials in accordance with data read out from the memory section, a pair of second bit lines, a switching circuit connected between the pair of first bit lines and the pair of second bit lines for transmitting the potential difference between the first bit lines to the pair of second bit lines, and a sense amplifier circuit connected to the pair of second bit lines for sensing and amplifying the potential difference between the second bit lines. The semiconductor memory device further comprises a control circuit for turning off the switching circuit after the data has been read out from the memory section and before an increase of the potential difference between the first bit lines has substantially finnished, and a second sense amplifier circuit connected to the first bit lines for sensing and amplifying the potential difference between the first bit lines to store data equivalent to the readout data in the memory section.
REFERENCES:
patent: 4542483 (1985-09-01), Procyk
patent: 4730280 (1988-03-01), Aoyama
patent: 4739500 (1988-04-01), Miyamoto et al.
patent: 4764901 (1988-08-01), Sakurai
Gossage Glenn
Kabushiki Kaisha Toshiba
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