Semiconductor memory device having switching circuit for couplin

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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Details

365190, 365233, 365193, G11C 11407

Patent

active

049808630

ABSTRACT:
A semiconductor memory device comprises a memory section of a dynamic type, a pair of first bit lines connected to the memory section, which are set to different potentials in accordance with data read out from the memory section, a pair of second bit lines, a switching circuit connected between the pair of first bit lines and the pair of second bit lines for transmitting the potential difference between the first bit lines to the pair of second bit lines, and a sense amplifier circuit connected to the pair of second bit lines for sensing and amplifying the potential difference between the second bit lines. The semiconductor memory device further comprises a control circuit for turning off the switching circuit after the data has been read out from the memory section and before an increase of the potential difference between the first bit lines has substantially finnished, and a second sense amplifier circuit connected to the first bit lines for sensing and amplifying the potential difference between the first bit lines to store data equivalent to the readout data in the memory section.

REFERENCES:
patent: 4542483 (1985-09-01), Procyk
patent: 4730280 (1988-03-01), Aoyama
patent: 4739500 (1988-04-01), Miyamoto et al.
patent: 4764901 (1988-08-01), Sakurai

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