Semiconductor memory device having surrounding gate transistor

Details Semiconductor memory device having surrounding gate transistor Semiconductor memory device having surrounding gate transistor

1994-06-27

1996-05-21

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 27108

Patent

active

055192360

ABSTRACT:
A semiconductor memory device includes at least one memory cell formed on a substrate. The memory cell is constructed by a hole capacitor and a vertical transistor. The hole capacitor is formed in a hole on the substrate. The vertical transistor is formed in a semiconductor column formed in position adjacent to the hole.

REFERENCES:
patent: 4672410 (1987-06-01), Miura et al.
patent: 4990980 (1991-02-01), Wada
patent: 5072269 (1991-12-01), Hieda
patent: 5252845 (1993-10-01), Kim et al.
IEDM 91, 1991, A Surrounding Isolation-Merged Plate Electrode (Simple) Cell with checker layout for 256Mbit DRAMs and beyond, pp. 469-472.

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