Semiconductor memory device having SRAM cells

Details Semiconductor memory device having SRAM cells Semiconductor memory device having SRAM cells

1993-11-30

1996-06-11

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365 51, 257903, G11C 1100

Patent

active

055263038

ABSTRACT:
The semiconductor memory device of the present invention relates to an SRAM, is object to secure a saturation drain current of a driver transistor large enough for a saturation drain current of a transfer transistor while keeping the area occupied by a memory cell within a predetermined range, and has a memory cell comprising a strip-shaped word line which includes a gate electrode of a first transistor, extends in a definite direction on a semiconductor substrate, and bends diagonally to the definite direction and widens at a first transistor region; an active region which has source/drain regions of the first transistor and intersects the word line which is formed between the source/drain regions.

REFERENCES:
patent: 4541006 (1985-09-01), Ariizumi et al.
patent: 5134581 (1992-07-01), Ishibashi et al.
patent: 5241495 (1993-08-01), Sasaki
patent: 5377140 (1994-12-01), Usuki

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