Semiconductor memory device having sense amplifiers with differe

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365190, G11C 700

Patent

active

047302801

ABSTRACT:
A semiconductor memory device, whose pairs of bit lines are connected to a pair of data buses, are divided into a plurality of blocks each comprising a plurality of parted memory cells, a pair of switching elements, and a block sense amplifier. The block sense amplifier has different driving abilities respectively so that the sense amplifier in the farthest block from the data bus has the most driving ability, the sense amplifier in the block nearer to the data bus has less driving ability, and the sense amplifier in the nearest block to the data bus has the least sensing ability. There is only one sense amplifier activated in a selected block, which is a block having a memory cell to be accessed. The operation of the pair of switching elements in a respective block is made after the sense amplifier in the selected block is activated so that the pairs of switching elements in the selected block and the blocks closer to the data bus looking from the selected block are turned ON.

REFERENCES:
patent: 4286178 (1981-08-01), Rao et al.
patent: 4287576 (1981-09-01), Pricer
patent: 4542483 (1985-09-01), Procyk
patent: 4590588 (1986-05-01), Itoh et al.

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