Semiconductor memory device having sense amplifiers shared betwe

Details Semiconductor memory device having sense amplifiers shared betwe Semiconductor memory device having sense amplifiers shared betwe

1998-08-04

1999-09-14

Le, Vu A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365205, 36518902, 36523002, G11C 700

Patent

active

059532750

ABSTRACT:
A semiconductor dynamic random access memory device has first open bit lines arranged in parallel and second open bit lines respectively paired with the first open bit lines so as to form bit line pairs and a sense amplifier shared between the bit line pairs so as to increase the magnitude of a potential difference indicative of a data bit sequentially supplied from the bit line pairs, and either high or low level indicative of the data bit is supplied to both first and second bit lines of the selected bit line pair upon completion of the sense amplification, thereby equalizing electric influence on the adjacent open bit lines.

REFERENCES:
patent: 5590080 (1996-12-01), Hasagawa et al.
patent: 5596533 (1997-01-01), Park

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