Semiconductor memory device having sense amplifier and...

Details Semiconductor memory device having sense amplifier and... Semiconductor memory device having sense amplifier and...

2005-08-02

2005-08-02

Mai, Son (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S203000, C365S204000

Reexamination Certificate

active

06925020

ABSTRACT:
A semiconductor memory device comprises a plurality of memory cell arrays, a plurality of sense amplifiers, a connection unit, a driver and an over-driver. The plurality of memory cell arrays comprise a plurality of memory cells. The plurality of sense amplifiers sense and amplify data stored in the plurality of memory cells. The connection unit selectively connects the plurality of sense amplifiers to the plurality of memory cell arrays. The driver drives the sense amplifier to a predetermined voltage. The over-driver applies an overdrive voltage to the driver for a predetermined time after the sense amplifier is temporarily separated from the selected memory cell array. In the semiconductor device since data in a bitline can be rapidly amplified, the restoration time of data stored in a memory cell is reduced, and the parameter tRCD. Accordingly, the operation speed of the semiconductor memory device can be improved.

REFERENCES:
patent: 6115316 (2000-09-01), Mori et al.
patent: 6304494 (2001-10-01), Arimoto
patent: 6477100 (2002-11-01), Takemura et al.
patent: 6487133 (2002-11-01), Wada et al.
patent: 6741514 (2004-05-01), Sako
patent: 6754122 (2004-06-01), Wada et al.

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