Semiconductor memory device having self-timing circuit

Static information storage and retrieval – Read/write circuit – Including signal comparison

Reexamination Certificate

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Details

C363S150000, C363S150000, C363S150000, C363S150000, C363S150000, C363S150000, C363S150000

Reexamination Certificate

active

06870777

ABSTRACT:
A semiconductor memory device includes a data access path for accessing a memory cell, a signal drive circuit which drives a signal on said data access path, a dummy path that emulates said data access path, and a dummy drive circuit which emulates said signal drive circuit, wherein said dummy path has a smaller load than said data access path, and said dummy drive circuit has a smaller drive capacity than said signal drive circuit.

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