Semiconductor memory device having self-refreshing function

Static information storage and retrieval – Read/write circuit – Data refresh

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36518909, G11C 11402

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active

058257055

ABSTRACT:
A timing generating circuit generates a signal SRE defining a period in which a self-refreshing operation is carried out based on a signal extRAS and a signal extCAS. An internal voltage down-converting circuit controls the level of an internal power supply voltage intVcc to be generated in the period defined by the signal SRE lower in the self-refreshing operation than in a normal operation. As a result, a semiconductor memory device is obtained which reduces current consumption in the self-refreshing operation by simple control in an internal circuit.

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