Semiconductor memory device having self-refresh function

Static information storage and retrieval – Read/write circuit – Data refresh

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36518905, G11C 700, G11C 1140

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active

048294845

ABSTRACT:
A virtually static RAM comprises a sense amplifier for a normal access operation and a refresh sense amplifier for a refresh operation. The sense amplifier operates at the time of the normal access operation and the refresh sense amplifier operates at the time of the refresh operation. When the normal access is required during the refresh operation, the refresh operation is interrupted with data read out from memory cells by the refresh operation being held in the refresh sense amplifier, and then the normal access operation is performed. After the normal access operation is completed, the refresh operation is resumed.

REFERENCES:
patent: 4344157 (1982-08-01), White, Jr. et al.
patent: 4376988 (1983-03-01), Ludwig et al.
patent: 4542483 (1985-09-01), Procyk
patent: 4625296 (1986-11-01), Shriver
patent: 4636989 (1987-01-01), Ikuzaki
IEEE J. of Sol. St. Circuits: "1Mbit Virtually Static RAM", by K. Nogami et al., vol. SC-21, No. 5, Oct. 1986, pp. 662-667.
ISSCC 86: "A 1Mb Virtually SRAM", by T. Sakurai et al., Feb. 21, 1986, pp. 252, 253 & 364.

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