Static information storage and retrieval – Read/write circuit – Testing
Patent
1998-03-06
2000-03-07
Nelms, David
Static information storage and retrieval
Read/write circuit
Testing
365233, G11C 800
Patent
active
060349042
ABSTRACT:
A semiconductor memory device includes a control circuit, a test mode control circuit, an internal period setting circuit and an address latch circuit. The control circuit detects whether test mode is designated or not. The test mode control circuit detects whether or not self disturb test mode is designated. The internal period setting circuit repeatedly generates a clock signal of a prescribed period when the test mode and the self disturb test mode are designated. Simultaneously, the address latch circuit latches an address at a fall of a row address strobe signal. The row decoder is activated in response to the clock signal, and repeatedly sets the word line corresponding to the latched address to the selected state.
REFERENCES:
patent: 5717652 (1998-02-01), Ooishi
patent: 5875153 (1999-02-01), Hii et al.
patent: 5883843 (1999-03-01), Hii et al.
Hayakawa Goro
Kuromiya Osamu
Tanida Susumu
Mitsubishi Denki & Kabushiki Kaisha
Mitsubishi Electric Engineering Company Limited
Nelms David
Nguyen Vanthu
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