Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-06-28
2010-12-07
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230060, C365S230090
Reexamination Certificate
active
07848168
ABSTRACT:
A semiconductor memory device can control the toggling of signals corresponding to internal addresses during an auto-refresh mode. The semiconductor memory device includes an internal address generator configured to generate a plurality of first word line driving information signals and a plurality of first to seventh address information signals, which are sequentially activated in response to a driving signal and a refresh signal, a toggle controller configured to generate first and second toggle control signals in response to the third to sixth address information signals during an auto-refresh mode or a self-refresh mode, and a driving controller configured to generate a plurality of bit line driving signals and a plurality of second word line driving information signals corresponding to the first to third and seventh address information signals in response to the first and second toggle control signals.
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Ho Hoai V
Hynix / Semiconductor Inc.
IP & T Group LLP
Norman James G
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