Semiconductor memory device having reference transistor and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S316000, C257S319000, C257SE29129, C257SE29306

Reexamination Certificate

active

07928491

ABSTRACT:
A semiconductor memory device has: a substrate; a memory cell transistor of a split-gate type formed on the substrate; and a reference transistor formed on the substrate and used for generating a reference current that is used in sensing data stored in the memory cell transistor. The memory cell transistor has a floating gate and a control gate, while the reference transistor is a MIS (Metal Insulator Semiconductor) transistor having a single gate electrode.

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Brown et al., Nonvolatile Semiconductor Memory Technology, IEEE Press, 1998, p. 118-119.
F. Masuoka, Flash Memory Technology Handbook, Aug. 15, 1993, pp. 34-36 (includes partial English translation of cited document).

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