Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S319000, C257SE29129, C257SE29306
Reexamination Certificate
active
07928491
ABSTRACT:
A semiconductor memory device has: a substrate; a memory cell transistor of a split-gate type formed on the substrate; and a reference transistor formed on the substrate and used for generating a reference current that is used in sensing data stored in the memory cell transistor. The memory cell transistor has a floating gate and a control gate, while the reference transistor is a MIS (Metal Insulator Semiconductor) transistor having a single gate electrode.
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Hayashi Fumihiko
Nakata Masashi
Foley & Lardner LLP
Gumedzoe Peniel M
Lee Eugene
Renesas Electronics Corporation
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