Semiconductor memory device having redundancy memory cells share

Details Semiconductor memory device having redundancy memory cells share Semiconductor memory device having redundancy memory cells share

1993-01-25

1995-08-29

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Bad bit

36523003, G11C 1300

Patent

active

054466920

ABSTRACT:
An improved SRAM is disclosed including a plurality of memory blocks each having a redundancy memory cell to be shared. In redundancy row decoders 50a, 50b, 50c provided in each memory block, a memory block to be remedied is programmed. Accordingly, a redundancy memory cell row corresponding to each redundancy row decoder can be used for remedy of a defect memory cell in another memory block. Since a defect memory cell may be remedied flexibly, the yield rate in production of semiconductor memories is improved.

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