Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1993-03-22
1994-10-18
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Bad bit
365201, 3652257, G11C 700
Patent
active
053574702
ABSTRACT:
A semiconductor memory device includes a plurality of memory cell arrays, a plurality of decoders for decoding a first address of memory addresses, each of the decoders being connected to a corresponding memory cell array, and a plurality of sense amplifiers, each connected to a corresponding memory cell array. Also included are a decoder for decoding a second address of the memory addresses, the decoder being connected to every memory cell array, to be shared by every memory cell array, a plurality of redundancy memory cells, each of which is arranged for a corresponding memory cell array, and a plurality of programming circuits, each, arranged relative to a corresponding memory cell array to receive the first memory address and output a signal of a predetermined logic level corresponding to a defective memory cell in a memory cell array. Further, there is included a programmable decoder for receiving the second address and signal from the programming circuits, for changing a decoding state of the second address according to the logic level of the output signal from the programming circuits and for outputting a redundancy memory cell select signal which selects a redundancy memory cell in place of a specified defective memory cell.
REFERENCES:
patent: 4935899 (1990-06-01), Morigami
patent: 5060197 (1991-10-01), Park et al.
patent: 5224073 (1993-06-01), Nakayama
patent: 5243570 (1993-09-01), Saruwatari
Namekawa Toshimasa
Okada Yoshio
Kabushiki Kaisha Toshiba
LaRoche Eugene R.
Mai Son
LandOfFree
Semiconductor memory device having redundancy memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having redundancy memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having redundancy memory cells will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2377737