Semiconductor memory device having p-channel field effect transi

Details Semiconductor memory device having p-channel field effect transi Semiconductor memory device having p-channel field effect transi

1997-10-24

1998-10-20

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

36523001, G11C 700

Patent

active

058257039

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells coupled to word lines having a first end and a second end opposite to the first end, a word line driving circuit, and a word line resetting circuit. The word line driving circuit has at least one p-channel field effect transistor which is located in a vicinity of the first end of the word lines and drives a corresponding one of the word lines. On the other hand, the word line resetting circuit has at least one n-channel field effect transistor which is located in a vicinity of the second end of the word lines and resets a corresponding one of the word lines.

REFERENCES:
patent: 4896300 (1990-01-01), Shinagawa et al.
patent: 4951259 (1990-08-01), Sato et al.
patent: 5420821 (1995-05-01), Rhee

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