Semiconductor memory device having over-driving scheme

Details Semiconductor memory device having over-driving scheme Semiconductor memory device having over-driving scheme

2005-02-08

2005-02-08

Mai, Son (Department: 2818)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S205000, C365S208000

Reexamination Certificate

active

06853593

ABSTRACT:
A semiconductor memory device has an over-driving scheme through which it is possible to perform effective over-driving regardless of the fluctuation of manufacturing and driving environment. The semiconductor memory device includes a first power supplying block for providing a normal voltage, a first driving block for driving a power line of a bit-line amplifier with a voltage on a connection node attached to the first power supplying block, a second driving block for driving the connection node with a voltage higher than the normal voltage, and a control block for generating an over-driving control signal which controls the second driving block by detecting a level of the voltage on the connection node to that of a preset reference voltage.

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