Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2007-06-19
2007-06-19
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S210130
Reexamination Certificate
active
11239219
ABSTRACT:
A semiconductor memory device includes a memory cell array, a sense amplifier, and a voltage generator. The memory cell array has a plurality of memory cells. Each of the memory cells is written with “0” or “1” as reference data after “0” or “1” as cell data has been read out from the memory cell. The sense amplifier compares and amplifies the reference data and the cell data read from a memory cell. The voltage generator keeps constant rate of change with time of at least one potential supplied for a read operation for the time interval from readout of the cell data is started until completion of readout of the reference data.
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Toshiyuki Nishihara, et al. “A Quasi-Matrix Ferroelectric Memory for Future Silicon Storage”, IEEE Journal of Solid-State Circuits, vol. 37, No. 11, Nov. 2002, pp. 1479-1484.
Junichi Yamada, et al. “A Self-Reference Read Scheme for a 1T/1C FeRAM”, 1998 Symposium on VLSI Circuits Digest of Technical Papers, pp. 238-241.
Ogiwara Ryu
Takashima Daisaburo
Kabushiki Kaisha Toshiba
Le Vu A.
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