Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1999-03-04
2000-09-19
Nelms, David
Static information storage and retrieval
Read/write circuit
Bad bit
365222, 3652257, 36523003, G11C 700
Patent
active
061222062
ABSTRACT:
A semiconductor memory device having redundant memory selection circuit XRDN which outputs a redundant replacement selection signal for each bank. In a refreshing operation, each redundant decoder XRED only compares an address indicated by row address signal XADD with an address of a defective memory cell stored, without referring to a bank selection signal included in row address signal XADD. Redundant memory cell selection circuit XRDN outputs redundant replacement selection signals XRDNS(A), (B) for respective banks A, B, for indicating a bank in which the replacement is to be performed with a redundant memory cell.
REFERENCES:
patent: 5796664 (1998-08-01), Tsuruda et al.
patent: 5808948 (1998-09-01), Kim et al.
patent: 5822257 (1998-10-01), Ogawa
Ho Hoai V.
NEC Corporation
Nelms David
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