Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-11-28
2010-02-16
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S230020, C365S189020, C365S154000, C365S226000
Reexamination Certificate
active
07663942
ABSTRACT:
A semiconductor memory device includes a plurality of memory cell columns each having a plurality of memory cells, each memory cell including being a static type, a plurality of local bit lines connected to the memory cell columns, a global bit line connected to the local bit lines via a plurality of sense amplifiers, a measurement terminal to which a measurement voltage is applied in a cell current measurement mode, and a plurality of switching circuits provided to correspond to the local bit lines, and configured to electrically connect the measurement terminal and one of the local bit lines in the cell current measurement mode.
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Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Yoha Connie C
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