Semiconductor memory device having input first-stage circuit

Details Semiconductor memory device having input first-stage circuit Semiconductor memory device having input first-stage circuit

2011-02-15

2011-02-15

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Noise suppression

C365S189090, C365S210100, C327S077000

Reexamination Certificate

active

07889584

ABSTRACT:
A semiconductor memory device of the present invention determines a logic level of a signal based on a predetermined reference voltage. And the memory device has an input terminal to which a reference signal having the reference voltage is input, a low-pass filter connected to the input terminal for passing a component of the reference voltage of the reference signal and eliminating undesired high frequency components, and one or more input first-stage circuits to each of which an output of the low-pass filter and a signal having the logic level to be determined are connected. In the memory device, the low-pass filter has predetermined attenuation at least at a frequency of an operating clock.

REFERENCES:
patent: 5907237 (1999-05-01), Sekimoto
patent: 5963077 (1999-10-01), Kim
patent: 6064275 (2000-05-01), Yamauchi
patent: 6236393 (2001-05-01), Ogawa et al.
patent: 6340902 (2002-01-01), Kato
patent: 6500715 (2002-12-01), Matsuzaki et al.
patent: 6646945 (2003-11-01), Lee et al.
patent: 6774714 (2004-08-01), Chida et al.
patent: 6804793 (2004-10-01), Josephson et al.
patent: 7208972 (2007-04-01), Dreps et al.
patent: 2002/0043669 (2002-04-01), Kobayashi et al.
patent: 2005/0285698 (2005-12-01), Kim
patent: 2006/0198175 (2006-09-01), Badawi et al.
patent: 07-007133 (1995-01-01), None
patent: 10-064263 (1998-03-01), None
patent: 10-214122 (1998-08-01), None
patent: 2002-083930 (2002-03-01), None
patent: 2002-124570 (2002-04-01), None
Japanese Office Action issued in Japanese Patent Application No. 2005-300803, mailed Jul. 13, 2010.

Affiliated with

Also associated with

Rating

Semiconductor memory device having input first-stage circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having input first-stage circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having input first-stage circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2630779