Semiconductor memory device having improved voltage...

Details Semiconductor memory device having improved voltage... Semiconductor memory device having improved voltage...

2011-04-12

2011-04-12

Mai, Son L (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S052000, C257S686000, C257S777000

Reexamination Certificate

active

07924592

ABSTRACT:
Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

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