Semiconductor memory device having improved stacked capacitor ce

Details Semiconductor memory device having improved stacked capacitor ce Semiconductor memory device having improved stacked capacitor ce

1994-09-26

1999-11-09

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257304, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059819898

ABSTRACT:
The invention provides a stacked capacitor cell structure for a semiconductor memory device. The cell includes a transistor formed in an active region in a surface of a semiconductor substrate; a first inter-layer insulator both overlying the transistor and having a contact hole over the transistor; a second inter-layer insulator both overlying the first inter-layer insulator and having a through hole with a larger diameter than the diameter of the contact hole; a stacked capacitor both formed within the through hole formed in the second inter-layer insulator and comprising a storage electrode electrically connected to the transistor through the contact hole, a capacitive insulation film and an opposite electrode; and a third inter-insulator overlying both the stacked capacitor and the second inter-layer insulator.

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