Semiconductor memory device having improved resistance to alpha

Details Semiconductor memory device having improved resistance to alpha Semiconductor memory device having improved resistance to alpha

1986-11-12

1989-05-23

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365182, 365205, 357 22, 357 41, G11C 1124, G11C 1134, H01L 2980, H01L 2702

Patent

active

048336459

ABSTRACT:
In the semiconductor memory device according to the present invention, a n type drain diffused region (9a) to be connected to a bit line (12) is formed on a p type semiconductor substrate (1) and a n type source diffused region (9b) is formed with a prescribed spacing from the n type drain region (9a). On the p type silicon substrate (1), a p type diffused region (16a) of high impurity density and p type diffused region (16b) of high impurity density are formed in such a manner that they are in contact with the n type drain diffused region (9a) and the n type source diffused region (9b), respectively, but not in the channel region of the n channel MOS transistor (18). Consequently, the .alpha. particle-generated charges can be decreased without changing the threshold voltage of the transfer gate transistor.

REFERENCES:
patent: 4434433 (1984-02-01), Nishizawa
patent: 4538166 (1985-08-01), Nakano
A. Mohsen et al, High Density, High Performance DRAM Cell, 1982 IEEE, IEDM, vol. 82, pp. 616-619.

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