Semiconductor memory device having improved memory cells provide

Details Semiconductor memory device having improved memory cells provide Semiconductor memory device having improved memory cells provide

1990-10-02

1991-12-31

Bowler, Alyssa H.

Static information storage and retrieval

Systems using particular element

Capacitors

365174, 357 236, G11C 700, G11C 11404

Patent

active

050776886

ABSTRACT:
A semiconductor memory device having a storage region constituted with the arrangement of a plurality of memory cells on a main surface of a semiconductor substrate. Each memory cell includes a switching element and a passive element for signal retention connected to the switching element, for retaining the electric charges transferred from the switching element. The passive element includes a central electrode having a generally columnar shape provided protruded on the main surface in a first direction away from the main surface, and the fins constituted with a conductor extending in the first direction and protruded from the outer periphery of the central electrode. Owing to the existence of the fins, the surface area of a signal storage electrode of the passive element is increased. In other words, the quantity of electric charges to be stored is increased.

REFERENCES:
patent: 4914628 (1990-04-01), Nishimura
patent: 4953125 (1990-08-01), Okumura et al.
patent: 4958318 (1990-09-01), Harari
W. Wakamiya et al, "Novel Stacked Capacitor Cell for 64Mb Dram", LSI R&D Laboratory, Mitsubishi Electric Corp, pp. 69-70.

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