Semiconductor memory device having improved bit line sensing...

Details Semiconductor memory device having improved bit line sensing... Semiconductor memory device having improved bit line sensing...

2005-02-22

2005-02-22

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S203000

Reexamination Certificate

active

06859405

ABSTRACT:
A semiconductor memory device having a bit line sense amplifier connected to a bit line pair may include a precharge part to precharge first and second drive nodes of the bit line sense amplifier to an equal voltage level. The device may include a switching part operatively connecting the first and second precharge nodes to the first and second drive nodes in response to sense amplifier drive signals applied during a data non-access mode. To drive power in the bit line sense amplifier, the precharge voltage may be applied in a precharge state to precharge the first and second drive nodes to the equal voltage level, the device may shift from the precharge state to an operational state to cut off the applied precharge voltage, and driving voltages may be applied to the first and second drive nodes to power the bit line sense amplifier of the device.

REFERENCES:
patent: 5339273 (1994-08-01), Taguchi
patent: 5848015 (1998-12-01), Seno
patent: 6046948 (2000-04-01), Zheng et al.
patent: 6272059 (2001-08-01), Ryu et al.

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