Semiconductor memory device having improved access to addresses

Details Semiconductor memory device having improved access to addresses Semiconductor memory device having improved access to addresses

1991-07-05

1994-04-26

Callahan, Timothy P.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365207, 36518901, 307530, G11C 700, G11C 1142

Patent

active

053073177

ABSTRACT:
One cell of the first cell group CG and one cell of the second cell group CxG are selected simultaneously in response to address signals A1 and A2; data of these selected cells are amplified by the first and second sense amplifiers SA1 and SA2, respectively as sense outputs dA, dA, dB, dB; these sense outputs are given to a select circuit SEL including output buffer circuits OB; the select circuit outputs any of the first and second sense outputs to an output circuit Q17, Q18 in response to select signals ODA, ODB applied from an output switch circuit OSW on the basis of a specific address signal A12, A12. Since plural sense outputs based upon plural cell data are previously outputted simultaneously from the sense amplifiers to the select circuit and then one of the sense outputs is selected on the basis of a specific address, the cell data can be read at high speed as compared with when data are simply read from cells without simultaneous data transfer and data selection.

REFERENCES:
patent: 4839868 (1989-06-01), Sato et al.
patent: 4926381 (1990-05-01), Fujii
patent: 4931994 (1990-06-01), Matsui et al.
patent: 5138578 (1992-08-01), Fujii

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