Semiconductor memory device having high electrical...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S306000

Reexamination Certificate

active

10918175

ABSTRACT:
A semiconductor memory device comprises a plurality of rows, each row comprising a plurality of active regions arranged at a pitch wherein the active regions in adjacent rows are shifted with respect to each other by one half of the pitch, wherein a distance between each active region in a row is equal to a distance between active regions in adjacent rows.

REFERENCES:
patent: 2001/0006473 (2001-07-01), Kang et al.

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