Static information storage and retrieval – Read/write circuit – For complementary information
Patent
1997-05-14
1998-04-21
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
For complementary information
365149, 365202, 365203, G11C 700
Patent
active
057425450
ABSTRACT:
A semiconductor memory device according to the present invention includes a pair of bit lines, a plurality of memory cells connected between the pair of bit lines, a sense amplifier, a pair of read bus lines connected to the sense amplifier, a first and second transistors provided between the pair of read bus line and the pair of bit lines, means for supplying a selection signal to gates of the first and second transistors, and a precharge circuit connected to the pair of read bus lines for precharging and equalizing the pair of read bus lines in response to an inversion of the selection signal, wherein a sum of parasitic capacitances between gates of a plurality of transistors constituting the precharge circuit and the read bus lines is equal to or larger than a sum of parasitic capacitances between gates of the first and second transistors and the read bus lines.
REFERENCES:
patent: 5392249 (1995-02-01), Kan
patent: 5500820 (1996-03-01), Nakaoka
patent: 5504709 (1996-04-01), Yabe et al.
patent: 5544110 (1996-08-01), Yuh
patent: 5675530 (1997-10-01), Hirano et al.
NEC Corporation
Yoo Do Hyun
LandOfFree
Semiconductor memory device having function of preventing potent does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device having function of preventing potent, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having function of preventing potent will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2065087