Static information storage and retrieval – Read/write circuit – Erase
Patent
1991-08-13
1992-10-13
Gossage, Glenn
Static information storage and retrieval
Read/write circuit
Erase
36523002, 365233, 3652385, 365239, 365194, G11C 700, G11C 800
Patent
active
051557053
ABSTRACT:
A semiconductor memory device with a flash write function includes word lines and bit lines; memory cells connected between the word lines and the bit lines; and a flash write mode designating unit for designating a flash write mode in accordance with external control signals. The semiconductor memory device further includes an internal address generating unit which is driven during a flash write mode for sequentially generating internal address signals. The semiconductor memory device additionally has a word-line selecting unit for sequentially selecting the word lines in accordance with the internal address signals from the internal address generating unit. A preset data generating unit is further included in the semiconductor memory device for generating preset data. The semiconductor memory device further has a write unit which is driven during the flash write mode for writing data from the preset data generating unit into all of the memory cells connected to the word line selected by the word-line selecting unit, wherein the flash write operation can be effected by using the internal address and without using an external address.
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Goto Shigeki
Kato Yoshiharu
Fujitsu Limited
Fujitsu VLSI Limited
Gossage Glenn
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