Semiconductor memory device having first and second voltage leve

Details Semiconductor memory device having first and second voltage leve Semiconductor memory device having first and second voltage leve

1997-09-17

2000-12-26

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Fet configuration adapted for use as static memory cell

257904, 257379, H01L 2711

Patent

active

061664472

ABSTRACT:
A memory device of the present invention provides a stable operation and low voltage characteristics. An access device receives first and second data signals on first and second data lines, respectively, and is coupled to first and second nodes. A drive device is coupled to the access device at the first and second nodes. A voltage shifting device is coupled to at least one of the first and second nodes to change a voltage of at least one of the first and second nodes. The access device includes a first access transistor coupled to the first data line and the first node. The access device also includes a second access transistor coupled to the second data line and the second node. The first and second access transistors are responsive to a control signal. The drive device includes a first resistive element coupled to the first node, a second resistive element coupled to the second node, a first drive transistor coupled to the first and second nodes, and a second drive transistor coupled to the first and second nodes. The voltage shifting device includes a first voltage shifter coupled to the first node such that the first voltage shifter changes a first node voltage level, and a second voltage shifter coupled to the second node such that the second voltage shifter changes a second node voltage level.

REFERENCES:
patent: 4535426 (1985-08-01), Ariizumi et al.
patent: 5508750 (1996-04-01), Hewlett et al.
patent: 5831897 (1998-11-01), Hodges

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