Semiconductor memory device having ferroelectric film

Details Semiconductor memory device having ferroelectric film Semiconductor memory device having ferroelectric film

1993-01-15

1994-09-06

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365218, G11C 1122

Patent

active

053454146

ABSTRACT:
The invention is directed to a semiconductor memory device which uses a field effect transistor having a ferroelectric gate film to store data therein. A storing field effect transistor is connected to a reading transistor in series. The storing field effect transistor has its gate connected to a writing and erasing transistor. In writing data, the writing and erasing transistor is made conductive, and writing voltage is applied to the gate of the storing field effect transistor through the writing and erasing transistor. This permits a polarization of the ferroelectric gate film to have a direction corresponding to data to be written. There is no need of controlling a potential at a semiconductor substrate provided with the storing field effect transistor in writing data, and therefore, no undesired voltage is applied to any other elements formed in the semiconductor substrate.

REFERENCES:
patent: 3426255 (1969-02-01), Heywang
patent: 4669062 (1987-05-01), Nakano
Baker, Stan, "Ferroelectric Chips", VLSI Systems Design, May 1988, pp. 116, 117 and 120-123.

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