Semiconductor memory device having error checking and...

Details Semiconductor memory device having error checking and... Semiconductor memory device having error checking and...

2006-03-30

2008-07-08

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S200000, C365S203000

Reexamination Certificate

active

07397685

ABSTRACT:
A semiconductor memory device includes a memory cell including a ferroelectric capacitor and a cell transistor and storing binary data at a first potential level and a second potential level which is higher than the first potential level, a bit line which reads the binary data from the memory cell, a correction circuit which corrects an error of the binary data read from the memory cell via the bit line, and a setting circuit which sets to the first potential a potential of the bit line connected to the memory cell from which at least the binary data is read, after the binary data is transferred to the correction circuit. The device further includes a control circuit which controls the potential of the bit line connected to the memory cell from which the binary data is read, in accordance with a result of error correction of the binary data.

REFERENCES:
patent: 2005/0094476 (2005-05-01), Noda
patent: 11-16389 (1999-01-01), None
patent: 2004-213719 (2004-07-01), None

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