Semiconductor memory device having electrically erasable program

Details Semiconductor memory device having electrically erasable program Semiconductor memory device having electrically erasable program

1994-01-03

1997-06-24

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257316, 257320, 257906, H01L 2968, H01L 2978

Patent

active

056419791

ABSTRACT:
A memory cell includes a transfer transistor having a gate which is connected to a word line, a first electrode which is connected to a bit line, and a second electrode, and a storage capacitor having a storage electrode which is connected to the second electrode of the transfer transistor, a confronting electrode, and a charge storage layer which is provided between the storage electrode and the confronting electrode. The storage capacitor has a capacitance which changes with a hysteresis curve which is determined by a bias voltage applied across the storage electrode and the confronting electrode, so that the capacitance takes one of two values depending on the bias voltage.

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