Semiconductor memory device having direct sense amplifier...

Details Semiconductor memory device having direct sense amplifier... Semiconductor memory device having direct sense amplifier...

2005-10-18

2005-10-18

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S190000, C365S063000

Reexamination Certificate

active

06956780

ABSTRACT:
A semiconductor memory device having a hierarchical input/output architecture, includes a direct sense amplifier which is implemented without increasing the chip area and the number of interconnection lines of the device. The semiconductor memory device includes a pair of write control switches which are connected between a pair of local input/output lines and a pair of global input/output lines, and which connect the pair of local input/output lines and the pair of global input/output lines in response to a write control signal. Also, the semiconductor memory device includes a direct sense amplifier which is connected to the pair of local input/output lines and the pair of global input/output lines and generates a voltage difference, corresponding to a voltage difference between the pair of local input/output lines, between the pair of global input/output lines in response to a read control signal.

REFERENCES:
patent: 6172918 (2001-01-01), Hidaka

Affiliated with

Also associated with

Rating

Semiconductor memory device having direct sense amplifier... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having direct sense amplifier..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having direct sense amplifier... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3461455