Semiconductor memory device having capacitors through which data

Details Semiconductor memory device having capacitors through which data Semiconductor memory device having capacitors through which data

1990-09-25

1991-09-24

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365190, G11C 1140

Patent

active

050519522

ABSTRACT:
A semiconductor memory device includes at least one memory cell having first and second nodes, a pair of bit lines coupled to the memory cell, a first power line which is coupled to the memory cell for supplying a first power source voltage, and a second power line which is coupled to the memory cell for supplying a second power source voltage. The memory cell includes a first resistor connected between the first power line and the first node, a first transistor connected between the first node and the second power line, a second resistor connected between the first power line and the second node, a second transistor connected between the second node and the second power line, a first capacitor connected between one of the bit lines and the first node, and a second capacitor connected between the other of the bit lines and the second node. The first transistor has a gate which is connected to the second node, and the second transistor has a gate which is connected to the first node. One of the first and second power lines is used in common as a word line.

REFERENCES:
patent: 3281630 (1966-10-01), Liang
patent: 3363115 (1968-01-01), Stephenson et al.
patent: 4719600 (1988-01-01), Huffman et al.
patent: 4858195 (1989-08-01), Soneda

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